Title

Imaging patterns of intensity in topographically directed photolithography

Document Type

Article

Publication Date

12-1-2005

Publication Title

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volume

23

Issue

3

First Page

918

Last Page

925

Abstract

This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of embossed, illuminated (λ=365-436 nm) photoresist yields structures as small as 70 nm. Numerical solutions of the Fresnel integral are used to calculate the pattern of intensity of light in the photoresist layer. Numeric simulation of a nondiffusion-limited development process results in theoretical structures that correlate well with the structures generated experimentally. © 2005 American Vacuum Society.

DOI

10.1116/1.1924415

ISSN

10711023

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