Title

Maskless photolithography: Embossed photoresist as its own optical element

Document Type

Article

Publication Date

12-1-1998

Publication Title

Applied Physics Letters

Volume

73

Issue

20

First Page

2893

Last Page

2895

Abstract

This letter demonstrates that features embossed on the surface of a layer of photoresist can direct UV light in the photoresist layer. These topographical features act as optical elements: they focus/disperse and phase shift incident light in the optical near field, inside the resist layer. A number of different surface topographies have been examined, which give 50-250 nm features after exposure and development. This method gives patterns of complex features over large areas, in a parallel process, that can then be transferred into silicon or metal. It provides a method for controlling the intensity of light inside a thin film of photoresist. © 1998 American Institute of Physics.

DOI

10.1063/1.122621

ISSN

00036951

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