Title
Maskless photolithography: Embossed photoresist as its own optical element
Document Type
Article
Publication Date
12-1-1998
Publication Title
Applied Physics Letters
Volume
73
Issue
20
First Page
2893
Last Page
2895
Abstract
This letter demonstrates that features embossed on the surface of a layer of photoresist can direct UV light in the photoresist layer. These topographical features act as optical elements: they focus/disperse and phase shift incident light in the optical near field, inside the resist layer. A number of different surface topographies have been examined, which give 50-250 nm features after exposure and development. This method gives patterns of complex features over large areas, in a parallel process, that can then be transferred into silicon or metal. It provides a method for controlling the intensity of light inside a thin film of photoresist. © 1998 American Institute of Physics.
DOI
10.1063/1.122621
ISSN
00036951
Recommended Citation
Paul, Kateri E.; Breen, Tricia L.; Aizenberg, Joanna; and Whitesides, George M.. (1998). Maskless photolithography: Embossed photoresist as its own optical element. Applied Physics Letters, 73 (20), 2893-2895.
https://scholar.uwindsor.ca/chemistrybiochemistrypub/268