Date of Award
Mechanical, Automotive, and Materials Engineering
Chao, B. S.,
Engineering, Materials Science.
CC BY-NC-ND 4.0
The effects of processing parameters on stoichiometry and microstructure of reactively sputtered TiN thin films for their diffusion barrier capability were investigated. Also, the microstructure of TiN films prepared by sputtering from a sintered TiN target was investigated for comparison. The reactively sputtered TiN films were deposited onto silicon substrates oriented parallel to the incoming flux from the plasma. The rf-power was set at 50W and the nitrogen content in the gas mixture was varied from 2.6% to 20%. The films were continuous, and exhibited resistivities ranging from 85 $\mu$ $\Omega$.cm to 1340 $\mu$ $\Omega$.cm which increased with increasing nitrogen in the Ar gas. Source: Dissertation Abstracts International, Volume: 52-11, Section: B, page: 6025. Co-Supervisors: B. S. Chao; H. Yamauchi. Thesis (Ph.D.)--University of Windsor (Canada), 1990.
Hyatt, Stephen Omar., "Reactive sputtered titanium nitride thin films for diffusion barriers." (1990). Electronic Theses and Dissertations. 3275.