Date of Award


Publication Type

Master Thesis

Degree Name



Electrical and Computer Engineering

First Advisor

Rashidzadeh, Rashid

Second Advisor

Abdel-Raheem, Esam


Equivalent Circuit, Modeling, TSV



Creative Commons License

Creative Commons Attribution-Noncommercial-No Derivative Works 4.0 License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 4.0 License.


This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TSVs). Three dimensional full-wave simulations are performed to extract equivalent circuit models. The effects of parametric and catastrophic faults due to pin-holes, voids and open circuits on the equivalent circuit models have been determined through 3D simulations. The extracted TSV models are then used to conduct delay tests to determine the required measurement resolution to detect TSV defects. It is shown that the substrate conductivity has a considerable effect on TSV fault characterization. It is also shown that, regardless of the substrate type, even a relatively large void does not alter the TSV resistance or its parasitic capacitance noticeably at 1GHz solution frequency. An on-chip test solution for TSV parametric faults requires a dedicated high resolution measurement circuit due to the minor variations of TSV circuit model parameters.


6 months