Document Type
Article
Publication Date
1997
Publication Title
Applied Physics Letters
Volume
71
Issue
10
First Page
1427
Last Page
1429
Abstract
We report a sevenfold improvement in the rate of contamination resist formation over previous experiments by using metastable neon atoms for nanolithography. Chemically assisted ion beam etching was used to transfer the resist pattern into the substrate. We demonstrate the fabrication of 50-nm-wide features in GaAs with well-defined edges and an aspect ratio >2:1. These are the best resolution and highest aspect ratio features that have been achieved with metastable atom lithography. The resist formation rate by the metastable neon atoms and the etch selectivity of the contamination resist with GaAs were measured.
Recommended Citation
Rehse, Steven J.; Glueck, A.D.; Lee, S.A.; and Goulakov, A.B.. (1997). Nanolithography with metastable neon atoms: Enhanced rate of contamination resist formation for nanostructure fabrication. Applied Physics Letters, 71 (10), 1427-1429.
https://scholar.uwindsor.ca/physicspub/24
Comments
Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.119914.