Title
Imaging patterns of intensity in topographically directed photolithography
Document Type
Article
Publication Date
12-1-2005
Publication Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume
23
Issue
3
First Page
918
Last Page
925
Abstract
This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of embossed, illuminated (λ=365-436 nm) photoresist yields structures as small as 70 nm. Numerical solutions of the Fresnel integral are used to calculate the pattern of intensity of light in the photoresist layer. Numeric simulation of a nondiffusion-limited development process results in theoretical structures that correlate well with the structures generated experimentally. © 2005 American Vacuum Society.
DOI
10.1116/1.1924415
ISSN
10711023
Recommended Citation
Paul, Kateri E.; Breen, Tricia L.; Hadzik, Tanja; Whitesides, George M.; Smith, Stephen P.; and Prentiss, Mara. (2005). Imaging patterns of intensity in topographically directed photolithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (3), 918-925.
https://scholar.uwindsor.ca/chemistrybiochemistrypub/259