Maskless photolithography: Embossed photoresist as its own optical element

Authors

Kateri E. Paul, Harvard University
Tricia L. Breen, Harvard University
Joanna Aizenberg, Harvard University
George M. Whitesides, Harvard University

Document Type

Article

Publication Date

12-1-1998

Publication Title

Applied Physics Letters

Volume

73

Issue

20

First Page

2893

Last Page

2895

Abstract

This letter demonstrates that features embossed on the surface of a layer of photoresist can direct UV light in the photoresist layer. These topographical features act as optical elements: they focus/disperse and phase shift incident light in the optical near field, inside the resist layer. A number of different surface topographies have been examined, which give 50-250 nm features after exposure and development. This method gives patterns of complex features over large areas, in a parallel process, that can then be transferred into silicon or metal. It provides a method for controlling the intensity of light inside a thin film of photoresist. © 1998 American Institute of Physics.

DOI

10.1063/1.122621

ISSN

00036951

Recommended Citation

Paul, Kateri E.; Breen, Tricia L.; Aizenberg, Joanna; and Whitesides, George M.. (1998). Maskless photolithography: Embossed photoresist as its own optical element. Applied Physics Letters, 73 (20), 2893-2895.
https://scholar.uwindsor.ca/chemistrybiochemistrypub/268